1/21/2022 | 8542323900 | MEMORY MODULE DYNAMIC RAM (DOS) FORM FACTOR DDR3 DIMM 1600 MHz 240-PIN (PC3-12800), 2 GB (256 MB X 8) CAPACITY, 1.35 V OR 1.5 V DC SUPPLY, USED COMPUTER | 0.48 | 309.97 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/19/2022 | 8542323900 | MONOLITHIC INTEGRAL MICROCIRCUIT: DYNAMIC MEMORY MICROCIRCUIT DDR3, FOR MOUNTING ON PRINTED BOARDS. WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NOT MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIATION RESISTANT. | 8.9 | 55668.4 | South Korea | HONG KONG | MT SYSTEMS LLC |
1/12/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT: DDR3L DYNAMIC MEMORY CHIP, FOR MOUNTING ON PRINTED BOARDS, WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIO-RESISTANT | 0.64 | 8570.4 | South Korea | ST PETERSBURG RUSSIA | MT SYSTEMS LLC |
1/19/2022 | 8542323900 | MONOLITHIC INTEGRAL MICROCIRCUIT: DYNAMIC MEMORY MICROCIRCUIT DDR4, FOR MOUNTING ON PRINTED BOARDS. WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NOT MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIATION RESISTANT. | 0.8 | 3301.08 | South Korea | HONG KONG | MT SYSTEMS LLC |
1/14/2022 | 8542323900 | MONOLITHIC INTEGRAL MICROCIRCUIT: DYNAMIC MEMORY MICROCIRCUIT DDR3, FOR MOUNTING ON PRINTED BOARDS. WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NOT MILITARY PURPOSE, NOT SCRAP ELECTRICAL EQUIPMENT, NOT RADIATION RESISTANT | 1.23 | 16862.4 | China | HONG KONG | MT SYSTEMS LLC |
1/21/2022 | 8542323900 | MEMORY MODULE DYNAMIC RANDOM RAM (DOS) FORM FACTOR DDR4 UDIMM 2400 MHz 288-PIN (PC4-19200), 8 GB 2 X (512 MB X 8) CAPACITY, 1.2 VDC POWER SUPPLY FOR COMPUTER USING in KA | 0.72 | 1229.96 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/31/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT: DDR3L DYNAMIC MEMORY CHIP, FOR MOUNTING ON PRINTED BOARDS, WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIO-RESISTANT | 0.42 | 6543.1 | South Korea | ST PETERSBURG RUSSIA | MT SYSTEMS LLC |
1/14/2022 | 8542323900 | MEMORY MODULE DYNAMIC RANDOM RAM (DOS) FORM FACTOR DDR4 SO-DIMM 2400 MHz 260-PIN (PC4-19200), 4 GB (512 MB X 8) CAPACITY, 1.2 VDC SUPPLY FOR COMPUTER USE AS | 0.24 | 218.46 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/21/2022 | 8542323900 | MEMORY MODULE DYNAMIC RAM (DOS) FORM FACTOR DDR4 SO-DIMM 2133MHz 260-PIN (PC4-17000), 4GB (512MB X 8) CAPACITY, 1.2V DC POWER FOR COMPUTER USE AS | 0.14 | 122.56 | Taiwan | ST PETERSBURG RUSSIA | NIEHSHANTS PROMAVTOMATIKA LLC |
1/11/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUIT K4T1G164QJ-BIE7000 - DOSE DDR2 SDRAM. DESIGNED FOR ELECTRICITY CONSUMPTION CONTROL EQUIPMENT. TECHNICAL DATA: MEMORY 1 GB, SUPPLY VOLTAGE 1.7 - 1.9 V, OPERATING TEMPERATURE RANGE FROM 0 TO | 1.38 | 2808.29 | South Korea | KIRCHHEIM BEI MUNCHEN GERMANY | SCANTI LLC |