| 1/11/2022 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC ANALOGUE, FOR A VOLTAGE OF 1.7 - 5.5 V, OBTAINED BY CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED VKO | 0.01 | 32.78 | China | HONG KONG | KOMPOTRADE LLC |
| 1/11/2022 | 8542323100 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF 4 MBIT, FOR A SUPPLY VOLTAGE OF 1.8 - 3.6 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMI-WIRE) | 0.06 | 480.25 | Thailand | HONG KONG | KOMPOTRADE LLC |
| 1/27/2022 | 8542319010 | MONOLITHIC INTEGRAL SINGLE-CRYSTAL DIGITAL MICROCIRCUIT DOES NOT HAVE CRYPTOGRAPHY AND ENCRYPTION FUNCTIONS. TECHNOLOGY:CMOS (ESPECIALLY COMPLEMENTARY METAL OXIDE SEMICONDUCTOR); THE MICROCIRCUIT IS SPECIALLY DESIGNED FOR APPLICATION WITH PRESSURE SENSORS. BUT | 1.84 | 7751.9 | Germany | ST PETERSBURG RUSSIA | ONIX ELECTRO LLC |
| 1/18/2022 | 8542399010 | CHIP ATM90E26-YU-R IS AN ACTIVE CHIP PERFORMED ACCORDING TO THE PRINCIPLE OF COMPLEMENTARY TECHNOLOGY AND IS A HIGH-PRECISION MONOLITHIC INTEGRAL IC CHIP MADE ON A SILICON CRYSTAL BY THE METHOD OF LAYER PHOTOGRAPHY AND | 13 | 12003 | Philippines | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
| 1/11/2022 | 8542399010 | MONOLITHIC DIGITAL INTEGRATED ELECTRONIC CIRCUITS FOR VOLTAGE 3 - 5.5 V, OBTAINED BY CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED IN A CASING | 0.01 | 56.33 | China | HONG KONG | KOMPOTRADE LLC |
| 1/26/2022 | 8542399090 | INTEGRATED ELECTRONIC CIRCUITS / VOLTAGE CONVERTERS, IN THE FORM OF SILICON WAVE WITH COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR STRUCTURES, NOT CUT INTO CRYSTALS, MLDR163_MLDR107 | 1.8 | 66169.2 | Malaysia | MOSCOW RUSSIA | PKK MILANDR JSC |
| 1/11/2022 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC ANALOGUE, FOR VOLTAGE 3 - 5.5 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED INTO | 0.01 | 19.32 | China | HONG KONG | KOMPOTRADE LLC |
| 1/11/2022 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC ANALOGUE, FOR SUPPLY VOLTAGE 2.7 - 5.5 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED | 0.02 | 612.59 | China | HONG KONG | KOMPOTRADE LLC |
| 1/11/2022 | 8542399010 | MONOLITHIC ANALOGUE INTEGRATED ELECTRONIC CIRCUITS FOR 1 V VOLTAGE OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) CONTAINING ACTIVE ELEMENTS MADE ON A SINGLE SEMICONDUCTOR CRYSTAL ASSEMBLED IN CASES WITH | 0.47 | 2890.64 | China | HONG KONG | KOMPOTRADE LLC |
| 1/11/2022 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOZE) WITH 2 GB MEMORY, FOR SUPPLY VOLTAGE 1.283 - 1.45 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) SRAN | 0.01 | 55.1 | China | HONG KONG | KOMPOTRADE LLC |