1/18/2022 | 8541290000 | MOSFET N-CHANNEL. MAXIMUM POWER DISSIPATION (PD) 192 W. MAXIMUM DRAIN-SOURCE VOLTAGE,V 100 MAXIMUM DRAIN-SOURCE CURRENT AT 25 ? MAX.? 148 MAXIMUM GATE-SOURCE VOLTAGE MAX.,V 2 OPEN CHANNEL RESISTANCE | 21.5 | 12963 | China | SMOLENSHCHINA | NEW ELECTRONIC COMPANY LLC |
1/27/2022 | 8541290000 | SILICON CARBIDE N-CHANNEL MOSFET TRANSISTORS (MOSFET). THEY ARE CONTROLLED BY THE ELECTRIC FIELD THAT IS CREATED BY THE VOLTAGE APPLIED TO THE GATE RELATIVE TO THE SOURCE. NOT SCRAP OF ELECTRICAL EQUIPMENT. | 0 | 796.12 | China | ST LAURENT BLANGY FRANCE | DKM GROUP LLC |
1/4/2022 | 8541290000 | FIELD TRANSISTOR, SEMICONDUCTOR DEVICE FOR CONTROL OF ELECTRIC RESISTANCE OF CURRENT-CONDUCTING CHANNEL BY TRANSVERSE ELECTRIC FIELD CREATED BY VOLTAGE APPLIED TO GATE. ALLOWABLE POWER DISSIPATION 63 W. USED IN THE INDUSTRY | 16.27 | 7891.31 | South Korea | VLADIVISTOK RUSSIA | FNS CIS LLC Software P P LLC OLG ELECTRONICS RUS |
1/26/2022 | 8541290000 | MOSFET N-CHANNEL. MAXIMUM POWER DISSIPATION (PD) 3 W. MAXIMUM DRAIN-SOURCE VOLTAGE 30V MAXIMUM DRAIN-SOURCE CURRENT AT 25C 100A MAXIMUM GATE-SOURCE VOLTAGE 1.5V ART: CSD17510Q5A - 2500 PCS | 0.7 | 928.8 | Taiwan | SMOLENSHCHINA | NEW ELECTRONIC COMPANY LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON | 4.3 | 4226.53 | China | COWLUN | ELECTROKOM VPK LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR - | 1 | 1789.09 | China | COWLUN | ELECTROKOM VPK LLC |