1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 116.91 | 66519.9 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/24/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 1 | 1915.57 | China | CHANGZHOU CHINA | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.64 | 1690.11 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.56 | 1325.42 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 5.78 | 1301.96 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/25/2022 | 8542900000 | PARTS OF MICROCIRCUITS: ENCLOSURES FOR SEMICONDUCTOR MICROSCIRCUIT MATERIAL OF THE CASE - KOVAR (ALLOY - 29% NICKEL, 17% COBALT, 54% IRON), THE ARTICLE IS NOT SPECIFIED /NOT SCRAP, NOT WASTE/ /NOT MILITARY USE/ /NOT IS A SOURCE/ OF IONIZING RADIATION NOT FOR O | 12.71 | 3822.16 | Germany | BERLIN | ELKOM LLC |