1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.02 | 525.81 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.18 | 2701.97 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.96 | 3121.35 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0 | 4.19 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.1 | 1598.93 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.09 | 104.14 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR CLEAR OBTAINING OF INFORMATION, NON MILITARY PURPOSES, FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbit: | 0.02 | 1551.74 | Taiwan | MOSCOW RUSSIA | EMC EXPERT LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE - FLASH EEPROM (PPVM - CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.32 | 1350.74 | Taiwan | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/20/2022 | 8542326100 | MONOLITHIC INTEGRATED MICROCIRCUIT, THAT IS A DYNAMIC RANDOM RAM MEMORY (DRAM) WITH A MEMORY CAPACITY OF 64 Mbit FOR SURFACE MOUNTING ON A PRINTED BOARD, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT | 0.6 | 3140.16 | Taiwan | HONG KONG | PROISTOK LLC |