1/10/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, IN A CASE, DESIGNED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - ALUMINUM GALLIUM ARSENIDE, FORWARD VOLTAGE: 1.85 V | 0.01 | 29.91 | China | TIF RIVER FOLLS | STOUT LLC |
1/31/2022 | 8541410009 | PHOTODIODS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm. TYPE OF SEMICONDUCTOR INDIUM-ARSENIDE GALI | 83 | 12473.4 | China | YICHANG | POINT OPORA LLC |
1/27/2022 | 8541410009 | CHIP RB-780B-190-10-4-SE IS A LASER DIODE (SEMICONDUCTOR). STRUCTURE: STRAINED STRUCTURE GROWN BY THE METHOD OF MULTI-QUANTUM WELLS AND STAGED GROWTH BY CHEMICAL VAPOR DEPOSITION GAAS (gallium arsenide) | 0.01 | 1971.27 | China | SHENZHEN CHINA | NPP INZHECT LLC |
1/19/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMITTER AND A PHOTORECEIVER, CONNECTED BY AN OPTICAL CHANNEL, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE, USED FOR SURFACE MOUNTING ON PRINTED BOARDS E | 0.08 | 20.33 | China | SHENZHEN CHINA | STOUT LLC |
1/24/2022 | 8541490000 | PHOTODIOD TSML1000. IS A NPN PHOTOTRANSISTOR IN A PLASTIC BODY. PHOTOTRANSISTOR MATERIAL GAALAS (ALUMINUM-GALLIUM ARSENIDE). INSTALLED ON SMD BOARD BY INSTALLATION. USED IN THE CE 307 METER AS A | 1.2 | 1600.28 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/27/2022 | 8541410001 | LEDS ARE UNMOUNTED LIGHT EMITTING DIODES THAT CONVERT ELECTRIC ENERGY TO VISIBLE RADIATION, SEMICONDUCTOR TYPE PN: Gallium Arsenide (GAAS), COMMONLY NAMED LED . USED FOR MANUFACTURING SOURCE | 4.38 | 3536.07 | China | SHENZHEN CHINA | VERTEX TRADE LLC |
1/17/2022 | 8541490000 | LIGHT EMITTING DIODES (SEMICONDUCTOR IS MADE FROM GALLIUM ARSENIDE AND INDIUM PHOSPHIDE, COMPONENT OF ELECTRICAL APPLIANCES BUILT AT PRODUCTION; | 1.08 | 128.9 | China | M O S K V A | INTERFORWARD LLC |