1/29/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.03 | 45.08 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/29/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.01 | 16.49 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/29/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.02 | 31.87 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |
1/26/2022 | 8541100009 | SCHOTTKY DIODE ASSEMBLY BAS70-05-TP CONSISTS OF TWO SILICON DIODES WITH CONNECTED CATHODES. TO EACH OF THE AREAS THERE IS OHMIC CONTACT. DIODE WITH P-N STRUCTURE. DOES NOT HAVE PHOTO SENSITIVITY. RATED VOLTAGE (V): 0-70. APPLICABLE IN | 0.2 | 34.1 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/22/2022 | 8541100009 | PROTECTIVE DIODE INTENDED FOR USE IN ELECTRONICS FOR PROTECTION OF SENSITIVE EQUIPMENT FROM ELECTROSTATIC DISCHARGE. GENERAL CIVIL APPLICATION. NOT APPLICABLE IN FIRE AUTOMATIC EQUIPMENT. NOT FOR MILITARY PURPOSES. | 0.1 | 127.77 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | MICROSAN LLC |