1/28/2022 | 8541290000 | TRANSISTORS WITH 1W OR MORE: IGBT IRG4PC60UPBF TRANSISTOR T5N TRANSISTOR FOR PX5 POWER AMPLIFIER PART NO. | 0.01 | 20.7 | Japan | MOSCOW RUSSIA | YAMAHA MUSIC LLC |
1/11/2022 | 8541290000 | TRANSISTORS WITH A DISPERSION OF MORE THAN 1 W, FOR USE IN POWER AMPLIFIERS OF THE TELECOMMUNICATIONS INDUSTRY / NOT SCRAP, NOT WASTE / NOT DUAL, NOT MILITARY. INTENDED USE/ NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES/ | 1.1 | 28543.6 | United Kingdom | HERNE | ELKOTECH LLC |
1/28/2022 | 8541100009 | DIODES: DIODE BRIDGE YG975C6R 100A 6 T5N FOR POWER AMPLIFIER MODEL T5N, REF WH436501-1PC, CHARACTERISTICS: VOLTAGE 240V, UP TO 20A; | 0 | 6.14 | Japan | MOSCOW RUSSIA | YAMAHA MUSIC LLC |
1/19/2022 | 8541290000 | TRANSISTORS FOR USE IN POWER AMPLIFIERS OF THE TELECOMMUNICATIONS INDUSTRY /NOT SCRAP, NOT WASTE/ NOT DUAL, NOT MILITARY. INTENDED USE/ NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES/ | 0.4 | 6687.48 | Malaysia | HERNE | ELKOTECH LLC |
1/19/2022 | 8541290000 | TRANSISTORS WITH A DISPERSION OF MORE THAN 1 W, FOR USE IN POWER AMPLIFIERS OF THE TELECOMMUNICATIONS INDUSTRY / NOT SCRAP, NOT WASTE / NOT DUAL, NOT MILITARY. INTENDED USE/ NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES/ | 0.1 | 375.38 | Thailand | RENO | ELKOTECH LLC |
1/19/2022 | 8541290000 | TRANSISTORS WITH A POWER DISSIPATION OF MORE THAN 1 W, FOR USE IN POWER AMPLIFIERS OF THE TELECOM INDUSTRY /NOT SCRAP, NOT WASTE /NOT DUAL, NON-MILITARY PURPOSE /NOT FOR EQUIPMENT OPERATING IN EXPLOSIVE ATMOSPHERES/ | 0.05 | 917.28 | Thailand | RENO | ELKOTECH LLC |
1/30/2022 | 8541290000 | TRANSISTORS FOR USE IN POWER AMPLIFIERS OF TELECOMMUNICATIONS INDUSTRY, POWER DISPOSION MORE THAN 1W /NOT SCRAP, NOT WASTE/ NOT DUAL, NOT MILITARY. INTENDED USE/ NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES/ | 1.3 | 13302.6 | Japan | YAMANASHI KEN | ELKOTECH LLC |
1/19/2022 | 8541590000 | MODULE MICROWAVE POWER AMPLIFIER RCA0525H50E1. IS A COMPLETE MICROWAVE POWER AMPLIFIER MODULE PROVIDING AMPLIFICATION OF THE INPUT SIGNAL WITH A SET GAIN FACTOR, MAXIMUM POWER 100 W. APPLIED IN THE INPUT TRAYS OF THE TE | 0.8 | 4027.38 | South Korea | KOREA | STKR LLC |
1/10/2022 | 8541590000 | POWER AMPLIFIER MODULE BASED ON GAAS SEMICONDUCTOR POWER AMPLIFIER BY ERAVANT INC. IS A POWER AMPLIFIER OF THE MICROWAVE SIGNAL, INTENDED TO AMPLIFY THE POWER OF THE MICROWAVE SIGNAL IN THE RECEIVING PATH. COMPONENT IS AVAILABLE, | 0.5 | 12448 | United States of America | HONG KONG | 1M LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, POWER DISPOSION MORE THAN 1 W, FOR USE IN POWER AMPLIFIERS OF THE TELECOMMUNICATIONS INDUSTRY / NOT SCRAP, NOT WASTE / NOT DUAL, NOT MILITARY. INTENDED USE/ NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES/ | 1.8 | 17317.6 | United States of America | LEOMINSTER UNITED KINGDOM | ELKOTECH LLC |