1/10/2022 | 8542399010 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 3.1 | 212.2 | China | UNKNOWN | URAL TELECOM SYSTEMS LLC |
1/28/2022 | 8541290000 | MONOLITHIC INTEGRATED CIRCUITS ON SEMICONDUCTOR WATER PLATES (TRANSISTORS) NOT CUT INTO CRYSTALS: MIK8205 - ON 175 PLATES. | 28.7 | 24504 | Taiwan | TAIPEI AIRPORT TAIWAN | PJSC MICRON |
1/20/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH LESS THAN 1 W | 9.57 | 2079.94 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/18/2022 | 8538909200 | POWER MODULES. THEY ARE A CASE WITH A COMMON BASE PLATE ON WHICH IS PLATED BIPOLAR TRANSISTORS WITH INSULATED GATES AND RESISTORS. ARE USED AS PART OF FREQUENCY CONVERTERS OF ELECTRIC MOTORS OF PUMPS FOR PUMPING | 1.2 | 623.3 | United States of America | YURIEV POLSKY | SEPARATE DIVISION OF BORETS NEO LLC IN YURIEV POLSKY |
1/24/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS | 1.25 | 202.63 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/10/2022 | 8541290000 | IGBT MODULE MIAA-HB12FA-300N-150PCS TU3417-065-41687291-2016. MATERIAL-SILICON. ARE NOT DISCRETE MICROWAVE TRANSISTORS. MAXIMUM WORKING TEMPERATURE 150 DEGREES. FROM. | 45.3 | 7485.34 | Italy | ASSAGO ITALY | TD PROTON ELECTROTEX CJSC |
1/20/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS | 3.5 | 1079.2 | United States of America | MOSCOW RUSSIA | PLATAH LLC |
1/26/2022 | 8541290000 | TRANSISTORS WITH 390W DISPOSIVE POWER /NON-SCRAP/ | 0.2 | 642.1 | Canada | MOSCOW RUSSIA | REGIONAL SYSTEM PROJECTS LLC |
1/28/2022 | 8542319010 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS, WITHOUT ENCRYPTION FUNCTIONS | 12 | 3500.27 | Hong Kong | HONG KONG | URAL TELECOM SYSTEMS LLC |
1/13/2022 | 8542399090 | SILICON EPITAXIAL-PLANAR STRUCTURES NPN SWITCHING TRANSISTORS. FOR MAINTENANCE AND REPAIR OF RADIO EQUIPMENT ON VESSELS OF THE CIVIL OCEAN FLEET | 1 | 1073.57 | India | MOSCOW RUSSIA | EKIS LLC |