1/28/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), CHINA | 0.05 | 157.05 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 GB AND A FREQUENCY OF UP TO 200 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A 153-PIN TFBGA CASE. | 0.15 | 1490.1 | China | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), CHINA | 0.01 | 400.06 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 2 GB FLASH MEMORY WITH A DATA TRANSMISSION BUS OF 8 BIT AND A READ/WRITE TIME OF 20 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A SOT C 48 CASE | 2.2 | 5938.5 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, MALAYSIA | 0.05 | 464.14 | Malaysia | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/20/2022 | 8542326900 | FLASH-ES PROM WITH A MEMORY MORE THAN 512 Mbps WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY): | 4.3 | 1847.44 | South Korea | MOSCOW RUSSIA | FNS CIS LLC Software P P LLC OLG ELECTRONICS RUS |
1/20/2022 | 8542326900 | FLASH-ES PROM WITH A MEMORY MORE THAN 512 Mbps WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY): | 1.4 | 911.76 | South Korea | MOSCOW RUSSIA | FNS CIS LLC Software P P LLC OLG ELECTRONICS RUS |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 32 GB AND A FREQUENCY OF UP TO 52 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TBGA CASE WITH 100 CONTACTS. | 0.01 | 210.39 | Singapore | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326900 | FLASH-ES PROM WITH MEMORY MORE THAN 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, MALAYSIA | 0.05 | 1317.24 | Malaysia | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/23/2022 | 8542326900 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.2 | 3587.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |