1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 8.6 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/25/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 64 Mbit FOR USE IN INDUSTRIAL ELECTRIC | 0.42 | 122.23 | China | HONG KONG | VEST OST LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.25 | 4410 | China | ST PETERSBURG RUSSIA | PIKMIKRO LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 6.3 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.05 | 27 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/20/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 100 2 MB | 0 | 22.99 | China | MONTREAL CANADA | ALTRABETA LLC |
1/20/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 4 KB | 0.01 | 5.8 | China | MONTREAL CANADA | ALTRABETA LLC |
1/12/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MBIT: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT FLASH MEMORY DEVICE IN THE FORM OF AN INTEGRAL CHIP, MEMORY VOLUME 1 Mbit, VOLTAGE FROM 2.5-TRM-M223M0 ART: 2.5-5.5V ART: | 1.12 | 884.38 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/14/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.27 | 836.36 | China | ST PETERSBURG RUSSIA | PIKMIKRO LLC |
1/16/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MBIT: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT FLASH MEMORY IN THE FORM OF AN INTEGRAL CHIP, MEMORY VOLUME 1 Mbit, VOLTAGE FROM 2.5-5.5M0 | 5.75 | 22703.8 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |